Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8
conference paper
Traditionally, the topics of this annual symposium focus upon the continuous scaling in CMOS integrated circuit manufacturing (More Moore and Beyond Moore for short) combined with the opportunities from growing diversification including sensors and embedded functionality (More than Moore). Thus, the main objective is to exchange recent advances in state-of-the-art engineering for CMOS IC manufacturing, like in advanced three-dimensional and tunnelling transistor concepts, etc. New developments included this year were in neuromorphic computing and negative capacitance transistors. These transactions contain a selection of the papers presented at the symposium and focus on new materials, processes, and devices in semiconductor technology. The papers address today’s challenges for further scaling of CMOS, including the introduction of high-mobility channel materials and tunnel FETs, where there has been exciting progress on integration of both SiGe/Ge and III-V compound semiconductors on silicon wafers. The formation and characterization of structures and devices that exploit these materials is reflected in many of the papers. The proceedings also include papers addressing the cleaning, fabrication, and characterization techniques essential for advanced device manufacturing. However, other, more diverse paths for electronic technology are also well represented in the proceedings, including papers that focus on new directions for memories, 3Dintegration, sensors, superconducting qubits, and power electronics.
Topics
TNO Identifier
788288
ISSN
1938-6737
ISBN
978-1-60768-834-1
Publisher
ECS
Source title
ECS Transactions
Editor(s)
Roozeboom, F.
Timans, P.J.
Kakushima, K.
Jagannathan, H.
Karim, Z.
Gusev, E.P.
Gendt, S. De
Timans, P.J.
Kakushima, K.
Jagannathan, H.
Karim, Z.
Gusev, E.P.
Gendt, S. De
Collation
188 p.
Files
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