Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
article
In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In þ Zn) ratio of the film can be accurately tuned in the entire range from zinc oxide to indium oxide. Thin film transistors with an In to Zn ratio of 2:1 show high field-effect mobility—exceeding 30 cm2/V s—and excellent stability. The authors demonstrate large scale integration in the form of 19-stage ring oscillators operating at 110 kHz. These electrical characteristics, in combination with the intrinsic advantages of atomic layer deposition, demonstrate the great potential of S-ALD for future display production.
Topics
Atomic layer depositionSpatial ALDIZOTFTThin film transistorsAtmospheric pressureField effect transistorsFilm growthIndium compoundsVapor depositionZinc compoundsZinc oxideAtmospheric plasmasChannel materialsElectrical characteristicHigh deposition ratesHigh field effect mobilityIndium zinc oxidesRing oscillatorTrimethylindiumThin film circuits
TNO Identifier
785889
ISSN
0734-2101
Source
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36(4)
Publisher
American Vacuum Society
Article nr.
04F401
Collation
7 p.
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