Area-Selective Atomic Layer Deposition of In2O3:H Using a μ-Plasma Printer for Local Area Activation
article
Researchers present a novel method for area-selective atomic layer deposition (AS-ALD) large-area electronics. It is a direct-write ALD process of In2O3:H, a highly promising and relevant transparent conductive oxide (TCO) material which makes use of printing technology for surface activation. first the surface of H-terminated silicon materials is locally activated by a μ-plasma printer in air or O2, and In2O3:H is deposited selectively on the activated areas. The selectivity stems from the fact that ALD In2O3:H leads to very long nucleation delays on H-terminated silicon materials.
TNO Identifier
865859
Source
Chemistry of Materials
Publisher
ACS