LPCVD polysilicon passivating contacts
conference paper
This paper presents progress by ECN and Tempress in developing and integrating processing of polysilicon passivating contacts aimed at use for low-cost industrial cell production. The polysilicon (poly߿ݩ is deposited by low pressure chemical vapour deposition (LPCVD), and we present results with in-situ as well as ex-situ doping processes. We demonstrate synergy and compatibility with industrial cell processing; for example applying hydrogenation from silicon nitride coating layers, and metallization by screen printed fire-through paste. We analyze the relation between surface recombination current prefactor Jo and the processing of the polysilicon. For n-type poly (n-poly߿ݩ we obtain Jo down to
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TNO Identifier
822135
Publisher
ECN
Collation
8 p.
Place of publication
Petten
Pages
8 p.
Files