Selective emitter in n-type c-Si solar cells
conference paper
A selective emitter is expected to have a better blue response, less Auger recombination, less contact recombination and lower contact resistivity in industrially processed n-type solar cells. In this work, we present a controllable process to make a selective emitter by applying a printable resist on the emitter as a mask. In the subsequent etch process the p+ emitter can be selectively etched to optimize the passivation and conductivity. IV measurements from a batch of solar cells are presented to demonstrate the improvements on Voc and Isc. The mean efficiency of the SE cells is increased by 0.24% absolute compared to the standard homogeneous emitter cells resulting in a highest efficiency of 20.7%.
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TNO Identifier
822093
Publisher
ECN
Collation
4 p.
Place of publication
Petten
Pages
4 p.
Files