Front side improvements for n-Pasha solar cells
conference paper
We present a new approach to improve the efficiency of n-type solar cells by tuning the boron emitter doping profile and optimizing the surface passivation. The boron emitter profile is tuned using a new method of just etching the surface by 10-30 nm. The etching was carried out after diffusion and glass removal. This resulted in a boron emitter without boron depletion at the surface, a higher VOC by 6 mV and a higher efficiency by 0.2% absolute. To improve the surface passivation, we found that a very high implied VOC of 680±2 mV can be obtained with an improved pre-cleaning followed by a wet chemical surface oxidation and ALD Al2O3 capped with PECVD-SiNx.
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TNO Identifier
822027
Publisher
ECN
Collation
4 p.
Place of publication
Petten
Pages
4 p.
Files