Atmospheric spatial atomic-layer-deposition of Zn(O,S) buffer layer for flexible Cu(In,Ga)Se2 solar cells: From lab-scale to large area roll to roll processing
conference paper
In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15×15 cm2) S-ALD set-up. We achieved values of cell efficiency (16 %) higher than the reference cells on glass substrate. © 2017 IEEE.
Newport
Newport
Topics
TNO Identifier
810209
ISBN
9781509056057
Publisher
Institute of Electrical and Electronics Engineers Inc.
Source title
44th IEEE Photovoltaic Specialist Conference, PVSC 2017. 25 June 2017 through 30 June 2017
Pages
1-3
Files
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