Characterizing electron beam induced damage in metrology and inspection of advance devices
conference paper
Topics
Chemical mechanical polishingChemical polishingElectron beamsHydrophobicitySemiconductor device manufactureSilicon wafersUnits of measurement300-mm silicon wafersE-beam damageHigh resolutionLow-k materialsOptical metrology techniquesScanning probe microscopy techniquesSemiconductor industrySemiconductor manufacturing
TNO Identifier
781876
ISSN
0277786X
ISBN
9781510613560
Publisher
SPIE
Article nr.
104460U
Source title
33rd European Mask and Lithography Conference, EMLC 2017, Dresden, Germany, 26-28 June 2017
Editor(s)
Finders, J.
Behringer, U.F.W.
Behringer, U.F.W.
Files
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