High-mobility channels in Thin Film Transistors made from amorphous indium zinc oxide (IZO) semiconductor films grown by atmospheric pressure plasma-enhanced spatial ALD
other
TNO Identifier
776076
Source title
2017 Technology Symposium on Advances in Chemical Technology of Atomic Layer Processing, Santa Clara, USA, July 14, 2017 (Invited).
Collation
30 p.
Files
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