15.3 An a-IGZO asynchronous delta-sigma modulator on foil achieving up to 43dB SNR and 40dB SNDR in 300Hz bandwidth

Garripoli, C.; Steen, J.L.P.J. van der; Smits, E.; Gelinck, G.H.; Roermund, A.H.M. van; Cantatore, E.

15.3 An a-IGZO asynchronous delta-sigma modulator on foil achieving up to 43dB SNR and 40dB SNDR in 300Hz bandwidth

conference paper

2017

Garripoli, C.

Steen, J.L.P.J. van der

Smits, E.

Gelinck, G.H.

Roermund, A.H.M. van

Cantatore, E.

Topics

Amorphous silicon Delta sigma modulation Modulators Signal to noise ratio Thin film transistors Biopotentials Delta sigma modulator Igzo tfts Large-area sensing Large-area substrates Low costs Sensor signals Semiconducting indium compounds

TNO Identifier

756675

Repository link

https://resolver.tno.nl/uuid:e1eeaa4c-55b8-4f3f-a2ac-5cdbf5115eb4

DOI

https://dx.doi.org/10.1109/ISSCC.2017.7870360

ISSN

01936530

ISBN

9781509037575

Publisher

Institute of Electrical and Electronics Engineers Inc.

Article nr.

7870360

Source title

64th IEEE International Solid-State Circuits Conference, ISSCC 2017. 5 February 2017 through 9 February 2017

Editor(s)

Fujino, L.C.

Pages

260-261

Files

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15.3 An a-IGZO asynchronous delta-sigma modulator on foil achieving up to 43dB SNR and 40dB SNDR in 300Hz bandwidth

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