15.3 An a-IGZO asynchronous delta-sigma modulator on foil achieving up to 43dB SNR and 40dB SNDR in 300Hz bandwidth

conference paper
2017
Garripoli, C.

Steen, J.L.P.J. van der

Smits, E.

Gelinck, G.H.

Roermund, A.H.M. van

Cantatore, E.
Topics
Amorphous siliconDelta sigma modulationModulatorsSignal to noise ratioThin film transistorsBiopotentialsDelta sigma modulatorIgzo tftsLarge-area sensingLarge-area substratesLow costsSensor signalsSemiconducting indium compounds
TNO Identifier
756675
Repository link
https://resolver.tno.nl/uuid:e1eeaa4c-55b8-4f3f-a2ac-5cdbf5115eb4
ISSN
01936530
ISBN
9781509037575
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
7870360
Source title
64th IEEE International Solid-State Circuits Conference, ISSCC 2017. 5 February 2017 through 9 February 2017
Editor(s)
Fujino, L.C.
Pages
260-261
Files
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