Flexible metal-oxide thin film transistor circuits for RFID and health patches
conference paper
We discuss in this paper the present state and future perspectives of thin-film oxide transistors for flexible electronics. The application case that we focus on is a flexible health patch containing an analog sensor interface as well as digital electronics to transmit the acquired data wirelessly to a base station. We examine the electronic performance of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) during mechanical bending. We discuss several ways to further boost the electronic transistor performance of n-type amorphous oxide semiconductors, by modifying the semiconductor or by improving the transistor architecture. We show analog and digital circuits constructed with several architectures, all based on n-type-only amorphous oxide technology. From circuit point of view, the discovery of a p-type amorphous semiconductor matching known n-type amorphous semiconductors would be of great importance. The present best-suited p-type is SnO, but it is poly-crystalline in nature and shows some ambipolarity due to the presence of n-type SnO2. In search of a better p-type semiconductor, preferably amorphous, we present recent insights into the band structure of potential amorphous oxide p-type semiconductors.
Topics
Amorphous semiconductorsFlexible electronicsMetalsOxide semiconductorsSemiconducting indium compoundsThin film transistorsThin filmsTiming circuitsAmorphous indium gallium zinc oxides (a igzo)Amorphous oxide semiconductor (AOS)Analog and digital circuitsMetal oxide thin-film transistorsTransistor architectureThin film circuits
TNO Identifier
753489
ISSN
01631918
ISBN
9781509039012
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
7838360
Source title
62nd IEEE International Electron Devices Meeting, IEDM 2016. 3 December 2016 through 7 December 2016
Pages
6.3.1-6.3.4
Files
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