Atmospheric spatial atomic-layer-deposition of Zn(O, S) buffer layer for flexible Cu(In, Ga)Se2 solar cells: From lab-scale to large area roll to roll processing

conference paper
2016
Frijters, C.H.

Bolt, P.J.

Poodt, P.W.G.

Knaapen, R.

Brink, J. van den

Ruth, M.

Bremaud, D.

Illiberi, A.
In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15x15 cm2) S-ALD set-up. We achieved values of cell efficiency (16 %) higher than the reference cells on glass substrate.
Topics
Atmospheric pressureALDDepositionSemiconducting selenium compoundsSolar cellsThin film solar cellsCu(in,ga)se2Roll-to-roll processingZn(O,S)Spatial atomic layer deposition
TNO Identifier
575371
Repository link
https://resolver.tno.nl/uuid:2adac258-263a-4c62-960b-854fa2af2d1c
ISSN
01608371
ISBN
9781509027248
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
7749856
Source title
43rd IEEE Photovoltaic Specialists Conference, PVSC 2016. 5 June 2016 through 10 June 2016
Pages
1449-1451
Files
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