Direct-write ALD of In2O3:H using a μ-plasma printer
other
We demonstrate direct-write[1]ALD of In2O3:H patterns with good selectivity on large area substrates. The nucleation delay on H-terminated surfaces is exploited to achieve area selective deposition w/o any subtractive step (e.g. etching, SAMs, litho, lift-off). Selectivity is achieved by tailoring the surface groups using a μ-plasma printer with an oxygen-based plasma-chemistry.
TNO Identifier
573982
Collation
1 p.
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