Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

conference paper
The topics of this annual symposium continue to describe the evolution of traditional scaling in CMOS integrated circuit manufacturing (More Moore for short), combined with the opportunities from growing diversification and embedded functionality (More than Moore). Once again, the main objective was to address the latest advances in channel, gate stack, and source/drain engineering for state-of-the-art CMOS integrated circuit manufacturing, next to advanced nonplanar transistor structures and new exploratory areas such as 3D and heterogeneous integration of devices, which are adding functionalities to conventional CMOS devices. This issue of ECS Transactions contains most of the 49 papers presented at the symposium, and focuses on new materials, processes, and devices in nanofabrication. The papers address many of the most significant challenges for further scaling of CMOS, including the introduction of highmobility channel materials, where there has been exciting progress on integration of both SiGe/Ge and III-V compound semiconductors on silicon wafers. The formation and characterization of structures and devices that exploit these materials are reflected in many of the papers. However, other, more diverse paths for electronic technology are also well represented in the proceedings,including papers that focus on new directions for memories, 3D-integration, opto-electronics, and power electronics. This issue of ECST also includes papers addressing the fabrication and characterization techniques essential for advanced device manufacturing. This year’s issue of ECS Transactions also covers invited talks related to photonics, resistive memory, and power device technology as advanced manufacturing technologies are also used here. Furthermore, we have the honor to include a review on the history of transistors, integrated circuits, and nanotechnology as they were perceived throughout the scientific career of Dr. Howard R. Huff (retired from Texas Instruments and International Sematech).
Topics
TNO Identifier
537020
ISSN
1938-6737
ISBN
978-1-60768-714-6
Publisher
ECS
Source title
International symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6, as a part of the
229th meeting of The Electrochemical Society held at the Hilton Bayfront and the San Diego Convention Center from May 29-June 2, 2016.
Collation
356 p.
Files
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