Physical-based analytical model of flexible a-IGZO TFTs accounting for both charge injection and transport
conference paper
Here we show a new physical-based analytical model of a-IGZO TFTs. TFTs scaling from L=200 μm to L=15 μm and fabricated on plastic foil are accurately reproduced with a unique set of parameters. The model is used to design a zero-VGS inverter. It is a valuable tool for circuit design and technology characterization. cop. 2015 IEEE.
Topics
TNO Identifier
535468
ISSN
01631918
ISBN
9781467398930
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
7409786
Source title
61st IEEE International Electron Devices Meeting, IEDM 2015, 7 December 2015 through 9 December 2015
Pages
28.2.1-28.2.4
Files
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