Electrical Characterization of Flexible InGaZnO Transistors and 8-b Transponder Chip Down to a Bending Radius of 2 mm
article
In this paper, we present the fabrication and characterization of highly flexible indium-gallium-zinc-oxide (IGZO)-based thin-film transistors (TFTs) and integrated circuits on a transparent and thin polymer substrate. Mechanical reliability tests are performed under bending conditions down to a bending radius of 2 mm. All the TFT parameters show only a weak dependence on mechanical strain. TFTs can withstand bending strain up to 0.75% without any significant change in the device operation. Mechanical reliability is further demonstrated to a higher TFT integration level by ring oscillators and 8-b transponder chips operating at a bending radius of 2 mm. cop. 1963-2012 IEEE.
Topics
TNO Identifier
534082
ISSN
00189383
Source
IEEE Transactions on Electron Devices, 62(12), pp. 4063-4068.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
7323805
Pages
4063-4068
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