P-6 : Impact of buffer layers on the self-aligned top-gate a-IGZO TFT characteristics
article
In this work we present the impact of buffer layers deposited by various techniques such as plasma enhanced chemical deposition (PECVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) techniques on self-aligned (SA) top gate amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT characteristics. Finally an optimized layer was integrated in TFT backplane on polyimide (PI) foil and a QQVGA AMOLED display is demonstrated.
TNO Identifier
533738
Source
SID Symposium Digest of Technical Papers, 46(June), pp. 1139-1142.
Pages
1139-1142
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