Mechanical and Electronic Properties of Thin-Film Transistors on Plastic, and Their Integration in Flexible Electronic Applications
article
The increasing interest in fl exible electronics and fl exible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-fi lm transistors used in activematrix displays is considered. The change of electrical performance of thinfilm semiconductor materials under mechanical stress is studied, including amorphous oxide semiconductors. This study comprises an experimental part, in which transistor structures are characterized under different mechanical loads, as well as a theoretical part, in which the changes in energy band
structures in the presence of stress and strain are investigated. The performance of amorphous oxide semiconductors are compared to reported results on organic semiconductors and covalent semiconductors, i.e., amorphous silicon and polysilicon. In order to compare the semiconductor materials, it is required to include the infl uence of the other transistor layers on the strain profi le. The bending limits are investigated, and shown to be due to failures in the gate dielectric and/or the contacts. Design rules are proposed to minimize strain in transistor stacks and in transistor arrays. Finally, an overview of the present and future applications of fl exible thin-fi lm transistors is given, and the suitability of the different material classes for those applications is assessed.
structures in the presence of stress and strain are investigated. The performance of amorphous oxide semiconductors are compared to reported results on organic semiconductors and covalent semiconductors, i.e., amorphous silicon and polysilicon. In order to compare the semiconductor materials, it is required to include the infl uence of the other transistor layers on the strain profi le. The bending limits are investigated, and shown to be due to failures in the gate dielectric and/or the contacts. Design rules are proposed to minimize strain in transistor stacks and in transistor arrays. Finally, an overview of the present and future applications of fl exible thin-fi lm transistors is given, and the suitability of the different material classes for those applications is assessed.
TNO Identifier
531438
ISSN
09359648
Source
Advanced Materials, 28(2)
Publisher
Wiley-VCH Verlag
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