Towards a contamination-tolerant EUV power sensor
other
In EUV Lithography short-, mid- and long-term control over in-band EUV power is needed for high-yield IC production. Existing sensors can be unstable over time due to contamination and/or degradation. TNO goal: to conceive a stable EUV power sensor. Sensitive to in-band EUV, negligible degradation, insensitive to out-of-band EUV, insensitive to carbon contamination (main type of contamination), and operating in vacuum up to several Pa H2.
TNO Identifier
529111
Publisher
TNO
Source title
290th PTB seminar ‘VUV and EUV metrology’, 4-5 November 2015, Berlin, Germany
Collation
1 p.
Place of publication
Delft
Files
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