50 Watt S-band power amplifier in 0.25 μm GaN technology
conference paper
A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model with the use of EM simulations. An output matching design approach is adopted which intrinsically optimizes the transistor harmonic load impedance. The results show that the amplifier delivers an output power of over 50 W within the frequency range from 3.05 to 3.5 GHz at a PAE of more than 62 %. The maximum measured output power is 63 W with a PAE of 65 %.
TNO Identifier
522531
Publisher
EuMA
Source title
European Microwave Week EuMW 2014, Proceedings of the 9th European Microwave Integrated Circuits Conference, EuMIC 2014, 6-7 Oct 2014, Rome, Italy
Place of publication
Louvain-la-Neuve
Pages
333-336