Atmospheric pressure plasma enhanced spatial ALD of silver
article
The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18μΩ cm and C- and F-levels below detection limits of energy dispersive x-ray analysis. The growth of the silver films starts through the nucleation of islands that subsequently coalesce. The authors show that the surface island morphology is dependent on surface diffusion, which can be controlled by temperature within the deposition temperature range of 100-120°C.
Topics
TNO Identifier
520743
ISSN
07342101
Source
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 33(1)
Publisher
AVS Science and Technology Society
Article nr.
01A131
Collation
7 p.
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