Organic imager on readout backplane based on TFTs with cross-linkable dielectrics
article
We report on the fabrication of imagers based on organic semiconductors both in the photodiode layer and in the readout backplane. The photodiode is based on evaporated ultrathin (<100 nm) stack of SubPc/C60, sensitive in the wavelength range between 300 and 650 nm. The readout circuit is a switch matrix fabricated with a solution processed semiconductor (XPRD30B01) and two solution processed, cross-linkable dielectrics (XDRD30B01). The readout TFTs (140/5-μ m channel width/length, respectively) have leakage current lower than 1 pA with the ON-current higher than 0.1 μ) A. The (32× 32\) pixel imagers with pixel pitch down to 200 μ) m are demonstrated with mean dark signal of a few μ) A/cm2}\) and linear photoresponse up to the incident power of 100 μ) W. These results show feasibility of fabricating readout circuits with TFTs based on cross-linkable dielectrics. This enables reduction of two patterning steps (opening of the gate dielectric and of the encapsulation layer) to just photolithography, leading to simplification of the backplane manufacturing process.
TNO Identifier
520223
ISSN
10411135
Source
IEEE Photonics Technology Letters, 26(21), pp. 2197-2200.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
6883179
Pages
2197-2200
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