Planar, monolithically integrated coil
patent
The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 .mu.H, and must have an equivalent series resistance of less than 0.1.OMEGA.. For this reason, those inductors are always bulky components, of a typical size of 2.times.2.times.1 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 very-high DC resistance values.
TNO Identifier
520093
Files
To receive the publication files, please send an e-mail request to TNO Repository.