50 Watt S-band Power Amplifier in 0.25 um GaN Technology
conference paper
A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model with the use of EM simulations. An output matching design approach is adopted which intrinsically optimizes the transistor harmonic load impedance. The results show that the amplifier delivers an
output power of over 50 W within the frequency range from 3.05 to 3.5 GHz at a PAE of more than 62 %. The maximum measured output power is 63 W with a PAE of 65 %.© 2014 European Microwave Association.
output power of over 50 W within the frequency range from 3.05 to 3.5 GHz at a PAE of more than 62 %. The maximum measured output power is 63 W with a PAE of 65 %.© 2014 European Microwave Association.
TNO Identifier
516585
Publisher
EuMA
Source title
European Microwave Week EuMW 2014, Proceedings of the 44th European Microwave Conference, EuMC 2014, 6-7 Oct 2014, Rome, Italy
Place of publication
Louvain-la-Neuve
Pages
1277-1280