Rendering high charge density of states in ionic liquid-gated MoS 2 transistors
article
We investigated high charge density of states (DOS) in the bandgap of MoS2 nanosheets with variable temperature measurements on ionic liquid-gated MoS2 transistors. The thermally activated charge transport indicates that the electrical current in the two-dimensional MoS 2 nanosheets under high charge density state follows the Meyer-Neldel rule. The achieved high charge density allows the surface DOS estimation of MoS2 nanosheets, which have distinct peaks at 0.135 and 0.145 eV below the conduction band, with the largest DOS values of 9.75 × 10 14 and 4.33 × 1014 cm-2 eV-1, respectively. This may represent the monolayer MoS2 nanosheets that coexist with the MoS2 multilayer in the channel area of the ionic liquid-gated MoS2 transistors. cop. 2014 American Chemical Society.
Topics
TNO Identifier
513453
ISSN
19327455
Source
Journal of Physical Chemistry C, 118(31), pp. 18278-18282.
Publisher
American Chemical Society
Pages
18278-18282
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