Highly stable carbon nanotube top-gate transistors with tunable threshold voltage
article
Carbon-nanotube top-gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias-stress stability under ambient conditions. Ambipolar single-walled carbon nanotube (SWNT) transistors are observed when P(VDF-TrFE-CTFE) is utilized as a topgate dielectric. Furthermore, continuous tuning of the threshold voltages of both unipolar and ambipolar SWNT thin-film transistors (TFTs) is demonstrated for the first time. cop. 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
TNO Identifier
513445
ISSN
15214095
Source
Advanced Materials, 26(26), pp. 4588-4593.
Publisher
Wiley-VCH Verlag
Pages
4588-4593
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