Atmospheric spatial atomic layer deposition of in-doped ZnO
article
Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range from In/[In+Zn] = 0 to 23% by co-injecting the vaporized metal precursors (i.e. DEZ and TMIn) in the deposition region and varying their flows. A high doping efficiency (up to 95%) is achieved, resulting in films with very high carrier density (6 1020 cm-3), low resistivity (3 mΩ cm) and high transparency in the visible range (> 85%). The morphology of the films changes from polycrystalline to amorphous with increasing indium content above 15%, while maintaining a low resistivity value (< 7 mΩ cm). Spatial-ALD combines a fine tuning of the composition, morphology and electrical properties of ZnO:In films with high deposition rates (> 0.1 nm/s). cop. 2014 The Electrochemical Society.
TNO Identifier
513328
ISSN
21628777
Source
ECS Journal of Solid State Science and Technology, 3(5), pp. P111-P114.
Publisher
Electrochemical Society Inc.
Pages
P111-P114
Files
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