Spatial Atomic Layer Deposition of transparent conductive oxides

article



Illiberi, A.

Scherpenborg, R.

Poodt, P.W.G.

Roozeboom, F.
Undoped and indium doped ZnO films have been grown by Spatial Atomic Layer Deposition at atmospheric pressure. The electrical properties of ZnO films are controlled by varying the indium content in the range from 0 to 15 %. A minimum resistivity value of 3 mΩ•cm is measured in 180 nm thick films for In/(In+Zn) ratio equal to 6 %, corresponding to a majority carrier density of 6•1020 cm-3 and a mobility of 3 cm2/Vs. All the films are highly transparent (> 80 %) in the visible range. cop. The Electrochemical Society.
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Atmospheric pressureAtomic layer depositionIndiumMetallic filmsThick filmsIndium contentIndium-doped ZnOMajority carriersResistivity valuesTransparent conductive oxidesVisible rangeZnO filmsDeposition
TNO Identifier
513296
Repository link
https://resolver.tno.nl/uuid:ea0e4b44-b5d3-43d1-8dba-849d6cfa30b4
ISSN
19386737
Source
ECS Transactions, 58(10), pp. 105-110.
Publisher
Electrochemical Society Inc.
Pages
105-110
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