n-Type self-assembled monolayer field-effect transistors for flexible organic electronics

article









Ringk, A.

Roelofs, W.S.C.

Smits, E.C.P.

Marel, C. van der

Salzmann, I.

Neuhold, A.

Gelinck, G.H.

Resel, R.

Leeuw, D.M. de

Strohriegl, P.
Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet on top of the dielectric. Reliable transistors with electron mobilities on the order of 10-3 cm2/V s with limited hysteresis were achieved on rigid as well on flexible substrates. Furthermore, a flexible NMOS-bias inverter based on SAMFETs is demonstrated for the first time. (c) 2013 Elsevier B.V. All rights reserved.
Topics




Self assembled monolayerN-type field-effect transistorPerylene bisimideFlexible transistorUnipolar bias inverter
TNO Identifier
503037
Repository link
https://resolver.tno.nl/uuid:5ef3c721-f88c-492b-bbd8-0e53aad20058
ISSN
1566-1199
Source
Organic Electronics, 14(5), pp. 1297–1304.
Collation
8 p.
Pages
1297–1304
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