Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil
article
In this study, we report high-quality amorphous indiunrv-galiium-zinc-oxide (a-IGZO) thinfilm
transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related circuits. The maximum processing temperature was limited to less than lôS'C in order to ensure good overiay accuracy (<1 pm) on foil. The presented process flow differs from the previously reported flow as we define the Mo source and drain contacts by dry etch prior to a-IGZO patterning. The TFTs show good electrical performance, including field-effect mobilities in the range of 15.0cmV(V-s), subthreshold slopes of 0.3V/decade, and off-currents <1.0pA on foil. The threshold voltage shifts of the TFTs measured were less than 1.0 V after a stressing time of 10'* s in both positive (+1 .OMV/cm) and negative (-1 .OMV/cm) bias directions. The applicability of this new BCE process flow is demonstrated in a 19-sfage ring oscillator, demonstrated to operate at a supply voltage of 10 V with a stage delay time of 1.35 (15, and in a TFT backplane driving a 32 x 32 active-matrix organic light-emitting diode display.
transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related circuits. The maximum processing temperature was limited to less than lôS'C in order to ensure good overiay accuracy (<1 pm) on foil. The presented process flow differs from the previously reported flow as we define the Mo source and drain contacts by dry etch prior to a-IGZO patterning. The TFTs show good electrical performance, including field-effect mobilities in the range of 15.0cmV(V-s), subthreshold slopes of 0.3V/decade, and off-currents <1.0pA on foil. The threshold voltage shifts of the TFTs measured were less than 1.0 V after a stressing time of 10'* s in both positive (+1 .OMV/cm) and negative (-1 .OMV/cm) bias directions. The applicability of this new BCE process flow is demonstrated in a 19-sfage ring oscillator, demonstrated to operate at a supply voltage of 10 V with a stage delay time of 1.35 (15, and in a TFT backplane driving a 32 x 32 active-matrix organic light-emitting diode display.
TNO Identifier
502798
ISSN
396-375
Source
Journal of the Society for Information Display, 21(9), pp. 369-507.
Pages
369-507
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