Crossbar arrays of nonvolatile, rewritable polymer ferroelectric diode memories on plastic substrates
article
In this paper, we demonstrate a scalable and low-cost memory technology using a phase separated blend of a ferroelectric polymer and a semiconducting polymer as data storage medium on thin, flexible polyester foils of only 25μm thickness. By sandwiching this polymer blend film between rows and columns of metal electrode lines where each intersection makes up one memory cell, we obtained 1 kbit cross bar arrays with bit densities of up to 10 kbit/cm2. © 2014 The Japan Society of Applied Physics
Topics
TNO Identifier
502178
Source
Applied Physics Express(7), pp. 1-4.
Article nr.
031602
Pages
1-4