30.1 8b thin-film microprocessor using a hybrid oxide-organic complementary technology with inkjet-printed P2ROM memory
conference paper
We present an 8b general-purpose microprocessor realized in a hybrid oxide-organic complementary thin-film technology. The n-type transistors are based on a solution-processed n-type metal-oxide semiconductor, and the p-type transistors use an organic semiconductor. As compared to previous work utilizing unipolar logic gates [1], the higher mobility n-type semiconductor and the use of complementary logic allow for a >50x speed improvement. It also adds robustness to the design, which allowed for a more complex and complete standard cell library. The microprocessor consists of two parts, a processor core chip and an instruction generator. The instructions are stored in a Write-Once-Read-Many (WORM) memory formatted by a post-fabrication inkjet printing step, called Print-Programmable Read-Only Memory (P2ROM). The entire processing was performed at temperatures compatible with plastic foil substrates, i.e., at or below 250°C [2]. © 2014 IEEE.
Topics
TNO Identifier
500749
ISSN
01936530
ISBN
9781479909186
Article nr.
6757523
Source title
2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014, 9 February 2014 through 13 February 2014, San Francisco, CA
Pages
486-487
Files
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