Two-temperature model for pulsed-laser-induced subsurface modifications in Si
article
We investigated the laser-material interaction during the production of laser-induced subsurface modifications in silicon with a numerical model. Such modifications are of interest for subsurface wafer dicing. To predict the shape of these modifications, a two-temperature model and an optical model were combined. We compared the model results with experimental data obtained by focusing laser pulses in the bulk of silicon wafers using a microscope objective. This comparison revealed a good agreement between the simulations and the experimental results. A parameter study was performed to investigate the effect of the laser wavelength, pulse duration and pulse energy on the formation of subsurface modifications. We found that both single- and multi-photon absorption may be used to produce subsurface modifications in silicon. © 2013 Springer-Verlag Berlin Heidelberg.
Topics
TNO Identifier
500218
ISSN
09478396
Source
Applied Physics A: Materials Science and Processing, 114(4), pp. 1135-1143.
Pages
1135-1143
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