In-situ analysis of the degradation of Cu(In, Ga)Se2 solar cells
conference paper
A unique method has been developed to in-situ monitor the accelerated degradation in Cu(In, Ga)Se2 solar cells, in which a degradation setup uses humidity, high temperatures and illumination as loads. IV characteristics of the solar cells are collected during the degradation. Cu(In, Ga)Se2 solar cells and minimodules were degraded in the set-up and analyzed. We report on the formation of spots on the cell surface and indicate modifications in the i-ZnO/CdS region that result in changes in the external quantum efficiency. Furthermore, an increase in series resistance and a decrease current density was measured. © 2013 IEEE.
TNO Identifier
493094
ISSN
01608371
ISBN
9781479932993
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
6744875
Source title
39th IEEE Photovoltaic Specialists Conference, PVSC 2013, 16 June 2013 through 21 June 2013, Tampa, FL
Pages
2047-2051
Files
To receive the publication files, please send an e-mail request to TNO Repository.