Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments
article
The deposition of zinc oxide has been performed by atmospheric pressure chemical vapor deposition and trends in growth rates are compared with the literature. Diethylzinc and tertiary butanol were used as the primary reactants and deposition rates above 800 nm/minwere obtained. The reaction kineticswere studied and detailed
process modeling based on a reaction mechanism that includes the formation of an alkylzinc alkoxide intermediate product is discussed. Thismechanism can explain the temperature dependent variety in deposition profiles observed in the static deposition experiments. The capability of modeling to gain insight in the local
process conditions inside a reactor is demonstrated. © 2013 Elsevier B.V. All rights reserved.
process modeling based on a reaction mechanism that includes the formation of an alkylzinc alkoxide intermediate product is discussed. Thismechanism can explain the temperature dependent variety in deposition profiles observed in the static deposition experiments. The capability of modeling to gain insight in the local
process conditions inside a reactor is demonstrated. © 2013 Elsevier B.V. All rights reserved.
Topics
TNO Identifier
490920
ISSN
00406090
Source
Thin Solid Films, 555, pp. 163-168.
Pages
163-168
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