On the environmental stability of ZnO thin films by spatial atomic layer deposition
article
Undoped and indium-doped ZnO films have been deposited by atmospheric spatial atomic-layer-deposition (spatial-ALD). The stability of their electrical, optical, and structural properties has been investigated by a damp-heat test in an environment with 85% relative humidity at 85 °C. The resistivity of the ZnO films increased during damp-heat exposure mainly due to a sharp decrease in the carrier mobility, while the carrier density and transparency degraded only partially. The increase in resistivity can be ascribed to a degradation of the structural properties of ZnO films, resulting in a higher level of tensile stress, as indicated by x-ray diffraction analysis, and in a reduced near-ultravoilet emission level in their photoluminescence spectra. Al2O3 thin (25-75 nm) films grown by spatial-ALD at 0.2 nm/s are used as moisture barrier to effectively enhance the stability of the electrical and structural properties of the films. © 2013 American Vacuum Society.
TNO Identifier
484282
ISSN
07342101
Source
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 31(6)
Article nr.
061504
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