Low-temperature IGZO TFT backplane and its application in flexible AMOLED displays on ultrathin polymer films
conference paper
Steen, J.L.P.J. van der
Tripathi, A.K.
Maas, J.P.V.
Diesen-Tempelaars, K. van
Leuken, L.B. van
Haas,G.J.A.J.F. de
Putten, J.B.P.H. van der
Yakimets, I.
Li, F.M.W.
Ellis, T.H.
Mol, A.M.B. van
Gelinck, G.H.
Myny, K.
Vicca, P.
Smout, S.
Ameys, M.
Huei Ke, T.
Steudel, S.
Nag, M.
Schols, S.
Genoe, J.
Heremans, P.
Fukui, Y.
Green, S.
Tripathi, A.K.
Maas, J.P.V.
Diesen-Tempelaars, K. van
Leuken, L.B. van
Haas,G.J.A.J.F. de
Putten, J.B.P.H. van der
Yakimets, I.
Li, F.M.W.
Ellis, T.H.
Mol, A.M.B. van
Gelinck, G.H.
Myny, K.
Vicca, P.
Smout, S.
Ameys, M.
Huei Ke, T.
Steudel, S.
Nag, M.
Schols, S.
Genoe, J.
Heremans, P.
Fukui, Y.
Green, S.
We present a low-temperature metal oxide transistor backplane technology using PECVD dielectrics. We show successful integration of the backplane in flexible 200ppi AMOLED displays on ultrathin polymer films. The displays are encapsulated with a thin-film barrier and the total stack thickness is less than 150μm.
Paper presented during the International Display Workshops 2013, Sapporo, Japan, 4-6 december.
TNO Identifier
484104
Source title
Proceedings of the International Display Workshops
Pages
1568 - 1596
Files
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