Submicron-AlGaN/GaN MMICs for Space Applications
conference paper
This paper reports on two AlGaN/GaN MMICtechnologies, performances of MMICs and modules, and reliability for space applications at X-band to W-band frequencies. Quarter-micron gate length HEMTs deliver 5 W/mm output power density at 30 V drain bias with >58% PAE at 10 GHz operating frequency. Dual-stage 8 W output power MMICs for telemetry applications in space have a PAE of more than 50% at 8.5 GHz with a lifetime of 106 h at a channel temperature of 200°C. Space evaluation tests indicate a stability of this technology suitable for space. For scientific missions a high-gain high power amplifier MMIC and module have been developed for 90 GHz operation with up to 16 dB of linear gain and 400 mW of output power.
TNO Identifier
473100
Source title
Proceedings IEEE International Microwave Symposium, IMS 2013, 2-7 June 2013, Seattle, WA, USA