N-Type self-assembled monolayer field-effect transistors and complementary inverters
article
This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10-3 cm2 V-1 s-1 and on/off current ratios up to 105 are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time. Highly reproducible n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative are reported. Electron mobilities of 1.5 × 10-3 cm2 V-1s-1 and on/off current ratios up to 105 are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time. Copyright (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Topics
complementary invertern-type field-effect transistororganic circuitsperylene bisimideself-assembled monolayerActive moleculesComplementary invertersON/OFF current ratioOrganic circuitsPerylene bisimidesPerylene derivativesPhosphonic acidsTransistor channelsElectron mobilityOrganic acidsSelf assembled monolayersTransistorsField effect transistors
TNO Identifier
472015
ISSN
1616301X
Source
Advanced Functional Materials, 23(16), pp. 2016-2023.
Collation
8 p.
Pages
2016-2023
Files
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