Organic nonvolatile memory devices based on ferroelectricity
article
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.
TNO Identifier
846628
Publisher
ECN
Collation
13 p.
Place of publication
Petten
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