Light-induced degradation in compensated mc-Si p-type solar cell
conference paper
Light-induced degradation (LID) due to boron-oxygen complex formation seriously deminishes the efficiency of p-type solar cells. The influence of dopants concentration, net doping and oxygen on the degradation process is investigated using a large variety of B and P compensated mc-Si ingots. Our experiments indicate that the trend of LID depends on the amounts of interstitial oxygen [Oi] and total boron [B]. No clear dependence was found on net doping.
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TNO Identifier
821945
Publisher
ECN
Collation
6 p.
Place of publication
Petten
Pages
6 p.
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