Differences in reverse bias voltage behavior of n-type and p-type multicrystalline solar cells
conference paper
The use of n-type, instead of p-type, silicon wafers for the production of mc-Si solar cells has a clear effect on the pre-breakdown behavior under reverse bias conditions. In p-type solar cells, material related breakdown patterns that are commonly observed in luminescence and thermography images. These patterns do not appear in the investigated n-type mc-Si solar cells, at least not down to a reverse bias of -16V. To the best of our knowledge, this difference between p-type and n-type mc-Si solar cells has not yet been described in literature before and could provide important information for the understanding of this type of wafer related breakdown.
TNO Identifier
821905
Publisher
ECN
Source title
Silicon PV Conference, Leuven, 3-5 april 2012.
Collation
7 p.
Place of publication
Petten
Pages
7 p.
Files