High efficiency n-type metal wrap through Si solar cells for low-cost industrial production
conference paper
A high-efficiency industrial cell process for n-type wafers using the conventional H-pattern front contact grid has recently become available. Based on simple industrial process steps, production of low-cost n-type cells has become a real possibility. In order to further reduce processing costs and increase module efficiencies, we have combined the strength of the n-type doped crystalline silicon with ECN's metallisation-wrap-through (MWT) solar cell concept, on n-type silicon wafers. As in p-type MWT (PUM) cells, the processing modifications from H-pattern to MWT are very limited. These cells were manufactured using a process similar to the industrial processes used for n-type H-pattern cells, extended with via-hole drilling. We have measured unconfirmed peak efficiencies of 18.7% on 156mm semi-square CZ n-type wafers (238 cm²). We have observed part of the expected current increase compared to the H-pattern grid. The fill factor needs to be further improved to realize the expected significantly higher efficiencies than for front contact cells.
TNO Identifier
821732
Publisher
ECN
Source title
25th European Photovoltaic Solar Energy Conference and Exhibition - 5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain, 6-10 september 2010.
Collation
3 p.
Place of publication
Petten
Pages
3 p.
Files