Passivation of Highly Boron Doped Silicon Surfaces by Sputtered AlOx and PECVD SiN, a Comparison
conference paper
We show that boron-diffused emitters can be passivated with AlOx deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an op-timised PECDV SiN process that in-cludes a chemically grown SiO2 interfa-cial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of JoE=228-349 fA/cm2 for sheet resistances of 88210 O/?, are already consistent with solar cell with efficiencies in the 20% range.
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TNO Identifier
821704
Publisher
ECN
Source title
Conference on Optoelectronic and Microelectronic Materials and Devices, Canberra, Australia, 12-15 december 2010.
Collation
2 p.
Place of publication
Petten
Pages
2 p.
Files