Internal gettering of iron and chromium to improve multicrystalline silicon wafers
conference paper
Metallic impurities in interstitial form are one of the most important limiting factors for minority carrier lifetimes in p-type silicon. Interstitial impurities can be transformed into less harmful precipitates by annealing. In this way, it is shown that the minority carrier lifetime can be increased with one order of magnitude for iron and with two orders of magnitude for chromium.
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TNO Identifier
821660
Publisher
ECN
Source title
3rd International Workshop on Crystalline Silicon Solar Cells, Trondheim, Norway, 3-5 juni 2009.
Collation
4 p.
Place of publication
Petten
Pages
4 p.
Files