Innovative diffusion processes for improved efficiency on industrial solar cells approached by doping profile manipulation
conference paper
Manipulation of the doping profile of phosphorus emitters in silicon solar cells is demonstrated in an industry-applicable process. By changing the diffusion temperaturetime (T-t) curve without increasing process time, the surface phosphorus concentration has been reduced resulting in an efficiency gain of 0.2% absolute. In addition, batch quartz tube furnace with gaseous dopant source and inline conveyor furnace with liquid dopant source were fairly compared by introducing an artificial process recipe with an identical T-t curve for each furnace. This comparison shows that the open circuit voltage is independent of the diffusion furnace type. This suggests that crucial factor regarding emitter quality is a lower process temperature and increased process time rather than diffusion furnace choice.
-
TNO Identifier
821609
Publisher
ECN
Source title
24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 21-25 september 2009.
Collation
5 p.
Place of publication
Petten
Pages
5 p.
Files