Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil
article
High-performance solution-based n-type metal oxide thin-film transistors (TFTs), fabricated
directly on polyimide foil at a post-annealing temperature of only 250''C, are realized and reported. Saturation mobilities exceeding 2cmV(Vs) and on-to-off current ratios up to 10^ are achieved. The usage of these oxide n-type TFTs as the pixel drive and select transistors In future flexible activematrix organic light-emitting diode (AMOLED) displays is proposed. With these oxide n-type TFTs, fast and low-voltage n-type only flexible circuitry is demonstrated. Furthermore, a complete 8-bit radiofrequency identification transponder chip on foil has been fabricated and measured, to prove that these oxide n-type TFTs have reached already a high level of yield and reliability. The integration of the same solution-based oxide n-type TFTs with organic p-type TFTs into hybrid complementary circuitry on polyimide foil is demonstrated. A comparison between both the n-type only and complementary elementary circuitry shows the high potential of this hybrid complementary technology for future line-drive circuitry embedded at the borders of flexible AMOLED displays.
directly on polyimide foil at a post-annealing temperature of only 250''C, are realized and reported. Saturation mobilities exceeding 2cmV(Vs) and on-to-off current ratios up to 10^ are achieved. The usage of these oxide n-type TFTs as the pixel drive and select transistors In future flexible activematrix organic light-emitting diode (AMOLED) displays is proposed. With these oxide n-type TFTs, fast and low-voltage n-type only flexible circuitry is demonstrated. Furthermore, a complete 8-bit radiofrequency identification transponder chip on foil has been fabricated and measured, to prove that these oxide n-type TFTs have reached already a high level of yield and reliability. The integration of the same solution-based oxide n-type TFTs with organic p-type TFTs into hybrid complementary circuitry on polyimide foil is demonstrated. A comparison between both the n-type only and complementary elementary circuitry shows the high potential of this hybrid complementary technology for future line-drive circuitry embedded at the borders of flexible AMOLED displays.
Topics
TNO Identifier
502787
ISSN
0734-1768
Source
Journal of the Society for Information Display, 20(9), pp. 499-507.
Pages
499-507
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