Low-temperature and low-voltage, solution-processed metal oxide n-TFTs and flexible circuitry on large-area polyimide foil

conference paper
2011
Rockelé, M.

Pham, D.V.

Steiger, J.

Botnaras, S.

Weber, D.

Vanfleteren, J.

Sterken, T.

Cuypers, D.

Steudel, S.

Myny, K.

Schols, S.

Putten, J.B.P.H. van der

Genoe, J.

Heremans, P.
In this article, we report on high-performance solution-based n-type metal oxide TFTs processed directly on polyimide foil and annealed at 250°C. Saturation mobilities exceeding 2 cm2/(Vs) and Ion/I off ratios beyond 108 have been achieved. Using these oxide n-TFTs, fast and low-voltage flexible circuitry is presented. Furthermore, a complete 8-bit RFID transponder chip, containing 294 oxide n-TFTs has been fabricated. Both high-speed and low-voltage operation makes the presented oxide n-TFT technology suited for both the pixel driving and embedded line-drive circuitry at the borders of flexible AMOLED displays.
TNO Identifier
466625
Repository link
https://resolver.tno.nl/uuid:9181182d-1c1e-4ecf-97c7-b0575cd1b18c
ISSN
18832490
ISBN
9781622761906
Source title
18th International Display Workshops 2011, IDW 2011, 7 - 9 December 2011, Nagoya, Japan
Pages
1267-1270
Files
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