Helium ion beam lithography of thick HSQ resists
conference paper
In this work we study the resist thickness dependence of SHIBL in negative tone (HSQ) resist. The ion beam used is a 30 keV focused He+ beam of an OrionPlus helium ion microscope. The structures made are dots, single and multiple lines, and squares. The resist thickness is varied between 4 and 162 nm. The substrate is silicon.
TNO Identifier
463675
Source title
56th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, May 29-June 1, 2012, Waikolo, Hawaii, USA
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