Origin of multiple memory states in organic ferroelectric field-effect transistors
article
In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate-top contact transistor architecture exhibits three reprogrammable memory states by applying appropriate gate voltages. Scanning Kelvin probe microscopy in conjunction with standard electrical characterization techniques reveals the state of the ferroelectric polarization in the three memory states as well as the device operation of the FeFET. © 2012 American Institute of Physics.
Topics
Contact transistorsDevice operationsElectrical characterizationFerroelectric field effect transistorsFerroelectric polarizationGate voltagesMaterial combinationMemory statePentacenesPoly(vinylidene fluoride-trifluoroethylene)ReprogrammableScanning Kelvin probe microscopyOrganic field effect transistorsPolarizationFerroelectricity
TNO Identifier
462882
ISSN
0003-6951
Source
Applied Physics Letters, 101(3)
Article nr.
No.: 033304
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